The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Oct. 22, 2002
Koichi Matsuno, Mie, JP;
Junichi Shiozawa, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a first gate electrode formed on the first insulating film; a second insulating film having a three-layered structure made by sequentially depositing a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer on the first gate electrode; a second gate electrode formed on the second insulating film; a first plane including the side surface of the first gate electrode or the side surface of the second gate electrode; and a second plane including the side surface of the second kind of insulating layer, wherein distance between said first plane and said second plane does not exceed 5 nm.