The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Apr. 07, 2010
Yoshio Ozawa, Yokohama, JP;
Isao Kamioka, Machida, JP;
Junichi Shiozawa, Yokkaichi, JP;
Akihito Yamamoto, Naka-gun, JP;
Ryota Fujitsuka, Yokohama, JP;
Yoshihiro Ogawa, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Isao Kamioka, Machida, JP;
Junichi Shiozawa, Yokkaichi, JP;
Akihito Yamamoto, Naka-gun, JP;
Ryota Fujitsuka, Yokohama, JP;
Yoshihiro Ogawa, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.