The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 04, 2012
Isao Kamioka, Hopewell Junction, NY (US);
Junichi Shiozawa, Yokohama, JP;
Ryu Kato, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Isao Kamioka, Hopewell Junction, NY (US);
Junichi Shiozawa, Yokohama, JP;
Ryu Kato, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.