The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
Aug. 18, 1992
Applicant:
Inventor:
Junichi Shiozawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437101 ; 437 29 ; 437 46 ; 437193 ; 437195 ; 437248 ; 437141 ; 4272481 ;
Abstract
A semiconductor layer forming method including depositing a boron doped amorphous silicon layer on a substrate having many steps, projections or cavities, by thermal decomposition of a higher order silane gas and diborane gas at 150.degree.-450.degree. C. The diborane gas is supplied to the substrate in a reaction limited.
Quick Actions:
Shiozawa, Junichi. (1995). Method of forming boron doped silicon layer and semiconductor (U.S. Patent No. 5389570). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5389570
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