Hefei, China

Jun Wei

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Wei. Retrieved from https://idiyas.com/inventor/jun-wei-lrm3v8hs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Jun Wei in Semiconductor Technology

Introduction

Jun Wei is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and a method for fabricating it.

Latest Patents

Jun Wei holds a patent for a semiconductor structure and method for fabricating the same. The patent outlines a method that includes providing a substrate, forming active pillars spaced apart with isolation layers to isolate them, and creating word line trenches extending along a specific direction. The invention details how the first and second word lines interact with the active pillars to form gate channels, enhancing the functionality of semiconductor devices.

Career Highlights

Jun Wei is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His work is instrumental in advancing memory technology, which is crucial for modern electronic devices.

Collaborations

Jun Wei collaborates with talented coworkers, including Dong Yan and Zijie Wang. Their combined expertise fosters a creative environment that drives innovation in semiconductor research and development.

Conclusion

Jun Wei's contributions to semiconductor technology exemplify the spirit of innovation in the field. His patent and ongoing work at Changxin Memory Technologies, Inc. highlight his role as a key player in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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