The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jan. 04, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Dong Yan, Hefei, CN;

Zijie Wang, Hefei, CN;

Jun Wei, Hefei, CN;

Wei Li, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/0335 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02);
Abstract

Embodiments provide a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate; forming, in the substrate, active pillars spaced and isolation layers configured to isolate the active pillars; forming, in an active pillars and an isolation layers, word line trenches extending along a first direction; and forming a first word line in the first word line trench and a second word line in the second word line trench, where opposite surfaces of the first word line form a first gate channel together with the active pillar, opposite surfaces of the second word line form a second gate channel together with the active pillar, and sum of a width of the first gate channel along the first direction and a width of the second gate channel along the first direction is greater than a perimeter of the active pillar.


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