This inventor holds 3 USPTO granted patents and 1 EPO patent. Top assignees: Japan Science and Technology Agency, Kyocera Corporation, National Institute for Materials Science. Active years: 2007-2009.
Company Filing History:
2 out of 1,328 
1 out of 6,899 
1 out of 574 
Years Active: 2007-2009
Title: Innovations of Jun Suda in Semiconductor Technology
Introduction
Jun Suda is a prominent inventor based in Shiga, Japan, known for her significant contributions to semiconductor technology. With a total of 3 patents, she has made remarkable advancements in the field, particularly in the growth of semiconductor crystals.
Latest Patents
One of her latest patents is a method of growing semiconductor crystal, specifically Silicon Carbide (SiC). SiC is recognized as a very stable substance, yet controlling the conditions of its surface for optimal crystal growth has been challenging in conventional Group III nitride crystal growing apparatuses. Suda's innovative approach involves rendering the surface of a SiC substrate into a step-terrace structure through a heating process in an HCl gas atmosphere. Following this, the substrate undergoes sequential treatment with aqua regia, hydrochloric acid, and hydrofluoric acid to create a clean SiC surface. The substrate is then placed in a high-vacuum apparatus, where the pressure is maintained at ultrahigh vacuum levels. In this state, the surface is irradiated with a Ga atomic beam at temperatures of 800°C or lower, followed by heating treatments at 800°C or higher. The process culminates in the growth of an AlN film on the SiC substrate, enhancing its properties.
Another notable patent is related to a field effect transistor that comprises a SiC substrate, a source and drain formed on its surface, and an insulating structure made of an AlN layer. This innovative design allows for controlled leakage current while maintaining a favorable interface state with SiC.
Career Highlights
Jun Suda has worked with esteemed organizations such as the Japan Science and Technology Agency and the National Institute for Materials Science. Her work in these institutions has significantly contributed to advancements in materials science and semiconductor technology.
Collaborations
Throughout her career, Suda has collaborated with notable colleagues, including Hiroyuki Matsunami and Shigeki Otani. These collaborations have fostered innovation and development in her research endeavors.
Conclusion
Jun Suda's contributions to semiconductor technology, particularly through her innovative patents, have established her as a key figure in the field. Her work continues to influence advancements in materials science and semiconductor applications.