Japan Science and Technology Agency

Kyocera Corporation

National Institute for Materials Science

Jun Suda

Hiroyuki Matsunami

Hiroyuki Kinoshita

Satoshi Kamiyama

Hiroshi Amano

Isamu Akasaki

Norio Onojima

Shigeki Otani

SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrateis rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrateis then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrateis etched so as to form a clean SiC surfaceon the substrate surface. The SiC substrateis then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10to 10Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beamat time tat temperature of 800&#xb0; C. or lower and performing a heating treatment at 800&#xb0; C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surfaceis initially irradiated with Al atomsin ultrahigh vacuum state, followed by the feeding of N atoms

Method of growing semiconductor crystal

A field effect transistor comprises a SiC substrate, a sourceand a drainformed on the surface of the SiC substrate, an insulating structure comprising an AlN layerformed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiOlayer formed thereon, and a gate electrodeformed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.

Field effect transistor and method for manufacturing same

Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrateof diboride XB(where X is either Zr or Ti) which is facially oriented in a (0001) planeand has a thickness of 0.1 mm or less. The substrateis permitted cleaving and splitting along a (10-10) planewith ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

Growing community of inventors

Shiga, Japan

Jun Suda