The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Aug. 21, 2003
Shigeki Otani, Ibaraki, JP;
Hiroyuki Kinoshita, Kyoto, JP;
Hiroyuki Matsunami, Kyoto, JP;
Jun Suda, Shiga, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
Shigeki Otani, Ibaraki, JP;
Hiroyuki Kinoshita, Kyoto, JP;
Hiroyuki Matsunami, Kyoto, JP;
Jun Suda, Shiga, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
National Institute for Materials Science, Ibaraki, JP;
Kyocera Corporation, Kyoto, JP;
Abstract
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrateof diboride XB(where X is either Zr or Ti) which is facially oriented in a (0001) planeand has a thickness of 0.1 mm or less. The substrateis permitted cleaving and splitting along a (10-10) planewith ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.