The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Jul. 28, 2004
Applicants:
Jun Suda, Shiga, JP;
Hiroyuki Matsunami, Kyoto, JP;
Inventors:
Jun Suda, Shiga, JP;
Hiroyuki Matsunami, Kyoto, JP;
Assignee:
Japan Science and Technology Agency, Saitama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor comprises a SiC substrate, a sourceand a drainformed on the surface of the SiC substrate, an insulating structure comprising an AlN layerformed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiOlayer formed thereon, and a gate electrodeformed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.