Pohang, South Korea

Jun Sik Yoon

This inventor holds 5 USPTO granted patents and 2 published patent applications and 3 EPO patents. Top assignees: Pohang University of Science and Technology Foundation, Samsung Electronics Co., Ltd., Yeungnam University. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Sik Yoon. Retrieved from https://idiyas.com/inventor/jun-sik-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 100.0


Average Co-Inventor Count = 3.3

ph-index = 1


Company Filing History:


Years Active: 2022-2026

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5 patents (USPTO):Explore Patents

Title: The Innovations of Jun Sik Yoon: Pioneering Advancements in CASCODE Devices

Introduction: Jun Sik Yoon, a prominent inventor based in Pohang-si, South Korea, has made significant contributions to the field of semiconductor technology. With a portfolio of four patents, Yoon's work focuses on enhancing device performance through innovative designs and manufacturing methods.

Latest Patents: Yoon's latest inventions include groundbreaking patents that address crucial aspects of transistor technology. One of his notable patents is the "Single Structure CASCODE Device and Method of Manufacturing Same," which describes a CASCODE device where multiple transistors are stacked vertically and connected in series. This design enhances key performance metrics such as intrinsic gain (GmRo), cutoff frequency (Ft), and maximum oscillation frequency (Fmax), making it highly applicable for analog and RF applications.

Another significant contribution is his patent titled "Method for Fabricating a Field-Effect Transistor with Size-Reduced Source/Drain Epitaxy." This innovation involves a fin field-effect transistor designed with size-reduced source/drain regions. By preventing the merging of epitaxial structures between transistors, Yoon's method allows for increased transistor density without incurring additional processing costs.

Career Highlights: Jun Sik Yoon has garnered extensive experience throughout his career, significantly impacting the semiconductor industry. He has worked at notable organizations such as the Postech Research and Business Development Foundation and Samsung Electronics Co., Ltd., where he honed his skills as an innovator and researcher.

Collaborations: Throughout his journey, Yoon has collaborated with distinguished professionals, including Rock Hyun Baek and Jin Su Jeong. These partnerships have played a vital role in advancing his research and patent endeavors.

Conclusion: Jun Sik Yoon stands out as a remarkable inventor in the field of semiconductor technology. His focus on developing CASCODE devices and improved fabrication methods reflects his dedication to innovation. With a track record of impactful patents and collaborative efforts, Yoon continues to shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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