Postech Research and Business Development Foundation

Samsung Electronics Co., Ltd.

Jun Sik Yoon

Seung Hwan Lee

Yong-Gu Lee

Hark-Sang Kim

Seok-Hyo Park

Yeong-Moo Ryu

Rock Hyun Baek

Jin Su Jeong

Jong-Un Park

Hye-Jung Byun

Disclosed in a CASCODE device in which multiple transistors are stacked in a vertical direction and connected in series. The CASCODE device exhibits improvements in device/circuit intrinsic gain (GmRo) that is a performance index for analog/RF applications, cutoff frequency (Ft), and maximum oscillation frequency (Fmax). A method of manufacturing the CASCODE device is also disclosed.

Single structure CASCODE device and method of manufacturing same

Disclosed is a fin field-effect transistor having size-reduced source/drain regions so that a merging phenomenon of epitaxial structures between transistors in a layout is prevented, thus increasing the number of transistors per unit area, and so that an additional mask process is not required, thus maintain processing costs without change, and a method of manufacturing the same.

Method for fabricating a field-effect transistor with size-reduced source/drain epitaxy

Disclosed is a metal source/drain-based field effect transistor having a structure that replaces a portion of a semiconductor of a source/drain with a metal and a method of manufacturing the same. By replacing the source/drain region with the source/drain metal region, increase of the parasitic resistance of a conventional three-dimensional MOSFET of several tens of nanometers, lattice mismatch of the source/drain during selective epitaxial growth, and self-heating effect can be fundamentally solved. Further, since the metal is deposited after the partial etching of the source/drain region or the selective epitaxial growth is partially performed under the conventional CMOS process, the process can be performed without using any additional mask.

Metal source/drain-based MOSFET and method for fabricating the same

Disclosed is a field effect transistor including an insulating film disposed between a source/drain region and a substrate. Since the insulating film prevents current leakage under a channel, it is not necessary to form a punch-through stopper. Further disclosed is a method of forming a field effect transistor.

Field-effect transistor without punch-through stopper and fabrication method thereof

Growing community of inventors

Pohang-si, South Korea

Jun Sik Yoon