The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Nov. 30, 2022
Applicant:
Postech Research and Business Development Foundation, Pohang-si, KR;
Inventors:
Rock Hyun Baek, Pohang-si, KR;
Jun Sik Yoon, Pohang-si, KR;
Jin Su Jeong, Daegu, KR;
Seung Hwan Lee, Busan, KR;
Assignee:
POSTECH Research and Business Development Foundation, Pohang-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/1079 (2013.01); H01L 29/4941 (2013.01); H01L 29/518 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract
Disclosed is a fin field-effect transistor having size-reduced source/drain regions so that a merging phenomenon of epitaxial structures between transistors in a layout is prevented, thus increasing the number of transistors per unit area, and so that an additional mask process is not required, thus maintain processing costs without change, and a method of manufacturing the same.