The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jan. 23, 2020
Applicant:
Postech Research and Business Development Foundation, Pohang-si, KR;
Inventors:
Rock Hyun Baek, Pohang-si, KR;
Jun Sik Yoon, Pohang-si, KR;
Jin Su Jeong, Daegu, KR;
Seung Hwan Lee, Busan, KR;
Assignee:
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract
Disclosed is a field effect transistor including an insulating film disposed between a source/drain region and a substrate. Since the insulating film prevents current leakage under a channel, it is not necessary to form a punch-through stopper. Further disclosed is a method of forming a field effect transistor.
Quick Actions:
Baek, Rock. (2022). Field-effect transistor without punch-through stopper and fabrication method thereof (U.S. Patent No. 11387317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11387317
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile