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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jun-Sik Hong

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2010.

USPTO Granted Patents = 3

% Patents Active = 33.3

Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal3 out of 132,107 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2010

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3 patents (USPTO):Explore Patents
1. 7648875 - Methods for forming DRAM devices including protective patterns and related devices (2010-01-19),
2. 7326621 - Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate (2008-02-05),
3. 7074725 - Method for forming a storage node of a capacitor (2006-07-11),
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