Location History:
- Tokyo, JP (2009)
- Hyogo, JP (1999 - 2020)
Company Filing History:
Years Active: 1999-2020
Title: The Innovative Mind of Jun Setogawa
Introduction
Jun Setogawa, an inventive spirit hailing from Hyogo, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 13 patents, Setogawa continues to push the boundaries of innovation, addressing crucial technical challenges in memory devices.
Latest Patents
Among his latest patents, Setogawa introduces a groundbreaking semiconductor memory device designed to prevent the occurrence of the Row Hammer issue. This invention features a row control circuit that latches target addresses upon the issuance of an ACTIVE command. It efficiently refreshes potential victim cells to maintain data integrity.
Additionally, he has developed a semiconductor device consisting of numerous memory cells that leverage threshold voltages for data storage. This invention includes a series of bit lines for reading signals and sense amplifiers that detect these signals, ultimately determining the condition of the memory cells based on the received data.
Career Highlights
Setogawa has worked with renowned companies, including Mitsubishi Electric Corporation and Renesas Technology Corporation, where he has honed his skills and made groundbreaking advancements in semiconductor technology. His work has played a pivotal role in enhancing the performance and reliability of memory devices.
Collaborations
Throughout his career, Setogawa has collaborated with talented individuals such as Tsukasa Ooishi and Takashi Kubo. Their combined expertise has fostered an environment of creativity and innovation, leading to the development of cutting-edge technology that addresses pressing issues in the industry.
Conclusion
Jun Setogawa exemplifies the qualities of a true innovator in the semiconductor field. His impressive patent portfolio and collaborations highlight his dedication to advancing technology, ultimately contributing to the enhancement of memory devices and their reliable performance in various applications.