The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
Jan. 07, 2002
Tsukasa Ooishi, Hyogo, JP;
Jun Setogawa, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The inventive semiconductor memory device comprises a synchronous circuit formed by a PLL circuit requiring precise operations, an internal circuit group and a VDC circuit. The VDC circuit, a capacitor, a PMOS transistor for a dummy current and an NMOS transistor serving as a high impedance element are arranged for the synchronous circuit. The VDC circuit is arranged for the internal circuit group. The VDC circuit eliminates power supply noise. The PMOS transistor stabilizes the operation of a differential amplifier of the VDC circuit. The capacitor keeps potential difference between a power supply side and a GND side constant. The NMOS transistor stabilizes the voltage on the GND side.