Jun Iwata

This inventor holds 5 USPTO granted patents. Top assignees: Canon Kabushiki Kaisha, Fujitsu Corporation. Active years: 2005-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Iwata. Retrieved from https://idiyas.com/inventor/jun-iwata-jbq00vo8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 80.0

Average Co-Inventor Count = 5.6

ph-index = 1

Forward Citations = 7(Granted Patents)

Company Filing History:

4 out of 92,901

Canon Kabushiki Kaisha

Years Active: 2005-2022

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5 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11329093 - Photoelectric conversion apparatus, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus (2022-05-10),

2. 10644055 - Photoelectric conversion apparatus including silicon oxide film and silicon nitride layers, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus (2020-05-05),

3. 10178286 - Method for forming color filter array, method for manufacturing imaging apparatus, and imaging apparatus (2019-01-08),

4. 9703015 - Photomask, method of manufacturing optical element array, optical element array (2017-07-11),

5. 6973004 - Memory device including backup memory for saving data in standby mode (2005-12-06),

Title: Innovations of Jun Iwata in Photoelectric Conversion Technology

Introduction

Jun Iwata is a notable inventor based in Kawasaki, Japan, recognized for his contributions to the field of photoelectric conversion technology. With a total of five patents to his name, Iwata has made significant advancements that enhance the efficiency and functionality of photoelectric devices.

Latest Patents

Iwata's latest patents include a photoelectric conversion apparatus, equipment incorporating this apparatus, and a manufacturing method for the photoelectric conversion apparatus. The photoelectric conversion apparatus features a semiconductor substrate that includes a photoelectric conversion portion and a metal-containing portion. It is designed with an interlayer insulation film that covers the metal-containing portion, a first silicon nitride layer on the photoelectric conversion portion, and a silicon oxide film strategically placed between the layers. Additionally, a second silicon nitride layer is arranged between the silicon oxide film and the metal-containing portion, enhancing the overall performance of the apparatus.

Career Highlights

Throughout his career, Jun Iwata has worked with prominent companies such as Canon and Fujitsu. His experience in these leading technology firms has allowed him to develop innovative solutions that address the challenges in photoelectric conversion.

Collaborations

Iwata has collaborated with talented individuals in the industry, including Tomoyuki Tezuka and Shinji Kodaira. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Jun Iwata's work in photoelectric conversion technology exemplifies the impact of innovation in the field. His patents reflect a commitment to advancing technology and improving the efficiency of photoelectric devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]