The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jul. 09, 2018
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Shinji Kodaira, Tokyo, JP;

Takehito Okabe, Yokohama, JP;

Mitsuhiro Yomori, Tama, JP;

Nobuyuki Endo, Fujisawa, JP;

Tomoyuki Tezuka, Sagamihara, JP;

Toshihiro Shoyama, Kawasaki, JP;

Jun Iwata, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/369 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1462 (2013.01); H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14685 (2013.01); H04N 5/369 (2013.01);
Abstract

A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.


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