Jinju, South Korea

Jun Ho Kim

This inventor holds 6 USPTO granted patents and 2 EPO patents. Top assignee: Electronics and Telecommunications Research Institute. Active years: 2003-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Ho Kim. Retrieved from https://idiyas.com/inventor/jun-ho-kim-o0dnkemj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile



Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Jinju-Si, KR (2003 - 2004)
  • Gyeongsangnam-do, KR (2007)
  • Kyungsangnam-Do Jinju, KR (2005 - 2009)
  • Incheon, KR (2010)

Company Filing History:


Years Active: 2003-2010

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6 patents (USPTO):Explore Patents

Title: Innovations of Jun Ho Kim: Advancing Semiconductor Technology

Introduction

Jun Ho Kim is a prominent inventor based in Kyungsangnam-Do Jinju, South Korea, known for his significant contributions in the field of semiconductor technology. With an impressive portfolio of six patents, he has dedicated his career to improving methods and technologies related to silicon crystallization and optical data storage.

Latest Patents

Among his recent innovations, Kim has developed a revolutionary crystallization method for amorphous silicon. This method enables the formation of large crystalline grains using a single pulse laser, which stands out as a cost-effective solution compared to the traditional dual pulse laser techniques. His patented layer structure incorporates a substrate, a metal layer, and two amorphous silicon layers separated by an insulating layer. The utilization of this new crystallization process maximizes electron mobility in semiconductor devices, enhancing their performance significantly.

In another noteworthy patent, Kim introduced a cantilever-type near-field probe designed for optical data storage applications. This probe improves optical throughput, making it a valuable asset in data storage technology. The manufacturing process involves forming an oxide film on a silicon substrate, with specific dielectric films acting as a mask layer. The design of the probe's distal end features a parabolic structure that further optimizes performance by enhancing the near-field aperture.

Career Highlights

Jun Ho Kim's work is affiliated with the Electronics and Telecommunications Research Institute, where he has been able to collaborate with leading experts in the field. His contributions have been crucial in advancing semiconductor technologies, thereby impacting a variety of industrial applications.

Collaborations

Kim collaborates closely with fellow innovators, including Sung Q Lee and Kang Ho Park, combining their expertise to push the boundaries of technology and enhance data storage and semiconductor functionalities. This teamwork exemplifies the innovative spirit within their research institution.

Conclusion

Jun Ho Kim's remarkable journey as an inventor in Kyungsangnam-Do Jinju, South Korea, showcases his dedication to advancing semiconductor technologies. His patents reflect a deep understanding of materials and techniques that have the potential to revolutionize industry standards. As technology continues to evolve, Jun Ho Kim remains at the forefront of innovation, playing a pivotal role in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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