The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Dec. 26, 2002
Kibong Song, Taejon, KR;
Eunkyoung Kim, Taejon, KR;
Sung Qyu Lee, Taejon, KR;
Kang Ho Park, Taejon, KR;
Jun Ho Kim, Kyungsangnam-Do Jinju, KR;
Kibong Song, Taejon, KR;
Eunkyoung Kim, Taejon, KR;
Sung Qyu Lee, Taejon, KR;
Kang Ho Park, Taejon, KR;
Jun Ho Kim, Kyungsangnam-Do Jinju, KR;
Abstract
Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.