Electronics and Telecommunications Research Institute

Pusan National University

Jun Ho Kim

Hyun Jae Lee

Soo In Lee

Sung Q Lee

Heung Mook Kim

Kang Ho Park

Gwang Soon Lee

Gun Yong Sung

Eun Kyoung Kim

Namho Hur

Yun Jeong Song

Hyoung Soo Lim

Kibong Song

Young Su Kim

Jae Hyun Seo

Eunkyoung Kim

Ki Bong Song

Jae Hwui Bae

Sang Hyeob Kim

Bong Ho Lee

Kyi Hwan Park

Woo Sub Youm

Tae Jin Jung

Ho Jun Kim

Hyung Nam Kim

Ki Hwan Suh

A layer structure comprising substrate, a metal layer, a first amorphous silicon layer, an insulating layer, and a second amorphous silicon layer, and a method of crystallizing the second amorphous silicon layer by irradiating single pulse laser to the layer structure are provided. The method provides an effect of forming large grain of amorphous silicon as good as using dual pulse laser or higher just by using single pulse laser without additional optical system. A semiconductor device employing the layer structure maximizes an electron mobility.

Crystallization method of amorphous silicon for forming large grain with single pulse laser

Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.

Cantilever-type near-field probe for optical data storage and method of manufacturing the same

An apparatus capable of tracking a sample surface level in a z direction and oscillating a cantilever at resonant frequency by using a frequency separation scheme in non-contact mode and method thereof. The inventive apparatus includes a sensing unit for sensing a sample surface; a frequency transforming unit for transforming the sensed signal; a frequency combining unit for combining signals; and an actuating unit for actuating the sensing unit.

Non-contact scanning apparatus using frequency response scheme and scanning method thereof

The present invention utilizes magnesium diboride (MgB ) or (Mg M )B as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB or (Mg M )B is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400&deg; C. to 900&deg; C.

Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof

Growing community of inventors

Kyungsangnam-Do Jinju, South Korea

Jun Ho Kim