Seoul, South Korea

Jun Hee Lim

This inventor holds 18 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Lg Semicon Co., Ltd.. Active years: 1998-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Hee Lim. Retrieved from https://idiyas.com/inventor/jun-hee-lim-954925l2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 58(Granted Patents)


Location History:

  • Hwasung-si, KR (2020)
  • Seoul, KR (1998 - 2023)

Company Filing History:


Years Active: 1998-2024

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Areas of Expertise:
Nonvolatile Memory
Vertical Memory
Ferroelectric Storage
Memory Cell Structure
Semiconductor Fabrication
Epitaxial Layer
Isolation Film
Metal Oxide Semiconductor
Selectors
Volatile Memory
Channel Layer
Upper Selector
18 patents (USPTO):Explore Patents

Title: The Contributions of Inventor Jun Hee Lim in Semiconductor Technology

Introduction: Jun Hee Lim, an accomplished inventor based in Seoul, South Korea, has made significant strides in the field of semiconductor technology, holding a remarkable 18 patents. His innovative work has pushed the boundaries of what is possible in the realms of nonvolatile memory devices and complex semiconductor architectures.

Latest Patents: Among his latest contributions, Lim has developed several notable semiconductor devices. One of his patents involves semiconductor devices that include upper and lower selectors. This device features a lower stack structure with a lower word line, an upper stack structure, adjacent decoders, and sophisticated signal interconnections. The innovation introduces a lower selector connecting to the signal interconnection, as well as an upper selector that maintains isolation from the lower selector while connecting to the upper word line. Another recent patent describes a nonvolatile memory device and its fabrication method. This memory device is characterized by a substrate, a first semiconductor layer, an etching stop film of metal oxide, and a uniquely structured mold. The thorough design integrates multiple layers that form a complex channel structure capable of enhancing the device's performance.

Career Highlights: Throughout his career, Jun Hee Lim has been associated with-leading companies in the semiconductor industry. He has held significant roles at Samsung Electronics Co., Ltd. and LG Semicon Co., Ltd., where his expertise and innovative mindset contributed significantly to their advancements in technology.

Collaborations: Lim has worked alongside distinguished professionals in the field, including talented colleagues Yong Kim and Kyung Hwan Lee. Their collaboration has undoubtedly fostered an environment of innovation, leading to numerous breakthroughs in semiconductor technology.

Conclusion: Jun Hee Lim's ongoing commitment to advancing semiconductor technologies is evident through his extensive patent portfolio and impactful collaborations. With each innovation, he continues to shape the future of electronics, making significant contributions that will be felt in various technological applications for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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