The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Jul. 25, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyung Hwan Lee, Hwaseong-si, KR;
Seung Hyun Kim, Seoul, KR;
Yong Seok Kim, Suwon-si, KR;
Jun Hee Lim, Seoul, KR;
Kohji Kanamori, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A memory device includes memory cells, the memory cells each including a first gate, a second gate electrically isolated from the first gate, a first gate insulating layer including a data storage layer having a ferroelectric material and disposed between the first gate and a channel region, a second gate insulating layer disposed between the second gate and the channel region, a first switching cell connected between the memory cells and a source line, and a second switching cell connected between the memory cells and a bit line. The second switching cell includes a third gate, a fourth gate, a third gate insulating layer not including a data storage layer having the ferroelectric material and the third gate disposed between the third gate and the channel region, and a fourth gate insulating layer disposed between the fourth gate and the channel region.