Newton, NH, United States of America

Joseph P Dzengeleski

USPTO Granted Patents = 10 

Average Co-Inventor Count = 2.8

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Newton, NH (US) (2008 - 2016)
  • Hampton, NH (US) (2014 - 2019)

Company Filing History:


Years Active: 2008-2019

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10 patents (USPTO):

Title: Innovations of Joseph P. Dzengeleski

Introduction

Joseph P. Dzengeleski is a notable inventor based in Newton, NH (US). He has made significant contributions to the field of ion beam technology, holding a total of 10 patents. His work primarily focuses on the creation and application of negative ion beams, which have various industrial and research applications.

Latest Patents

One of his latest patents is titled "Negative Ribbon Ion Beams from Pulsed Plasmas." This invention discloses an apparatus and method for the creation of negative ion beams. The apparatus includes an RF ion source with an extraction aperture. An antenna, positioned near a dielectric window, is energized by a pulsed RF power supply. While the RF power supply is active, a plasma consisting mainly of positive ions and electrons is generated. Once the RF power supply is turned off, the plasma transitions into an ion-ion plasma. Negative ions can be extracted from the RF ion source during this deactivation phase. These negative ions, forming a negative ribbon ion beam, can be directed toward a workpiece at a specific incident angle. Additionally, both positive and negative ion beams can be extracted from the same ion source by pulsing the bias power supply multiple times within each period.

Career Highlights

Joseph P. Dzengeleski is currently employed at Varian Semiconductor Equipment Associates, Inc. His innovative work has positioned him as a key figure in the development of advanced ion beam technologies. His patents reflect a deep understanding of plasma physics and its applications in semiconductor manufacturing.

Collaborations

Throughout his career, Joseph has collaborated with notable colleagues, including Gregg Alexander Norris and Daniel Distaso. These collaborations have further enhanced the impact of his inventions in the field.

Conclusion

Joseph P. Dzengeleski's contributions to ion beam technology through his patents and collaborations highlight his role as a leading inventor in this specialized area. His work continues to influence advancements in semiconductor equipment and related technologies.

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