The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Oct. 07, 2004
Shengwu Chang, South Hamilton, MA (US);
Antonella Cucchetti, Beverly, MA (US);
Joseph P. Dzengeleski, Newton, NH (US);
Gregory R. Gibilaro, Topsfield, MA (US);
Rosario Mollica, Wilmington, MA (US);
Gregg A. Norris, Rockport, MA (US);
Joseph C. Olson, Beverly, MA (US);
Marie J. Welsch, Georgetown, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Antonella Cucchetti, Beverly, MA (US);
Joseph P. Dzengeleski, Newton, NH (US);
Gregory R. Gibilaro, Topsfield, MA (US);
Rosario Mollica, Wilmington, MA (US);
Gregg A. Norris, Rockport, MA (US);
Joseph C. Olson, Beverly, MA (US);
Marie J. Welsch, Georgetown, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.