Company Filing History:
Years Active: 2008
Title: Marie J Welsch: Innovator in Ion Beam Technology
Introduction
Marie J Welsch is a notable inventor based in Georgetown, MA (US). She has made significant contributions to the field of ion beam technology, holding 2 patents that enhance the efficiency and effectiveness of ion implantation processes. Her work is instrumental in advancing semiconductor manufacturing techniques.
Latest Patents
Welsch's latest patents include innovative methods for tuning ion implanters and determining ion beam contamination. The first patent, titled "Ion beam implant current, spot width and position tuning," discloses a method, system, and program product for optimizing an ion implanter system. This invention involves obtaining an ion beam profile by scanning the ion beam across a profiler within an implant chamber. It tunes the ion implanter system to maximize implant current while optimizing total ion beam current and spot width. Additionally, it positions the ion beam along a desired path based on feedback from the spot beam center, improving productivity and performance by reducing setup time.
The second patent, "Ion beam contamination determination," presents a system and method for detecting contamination in an ion beam. In cases of isobaric interference, it measures a third ion in the beam to estimate the relative amount of a contaminant ion compared to the expected ion. This estimation, combined with the measured mass resolution of the ion implantation system, helps determine whether the ion implantation process should be suspended.
Career Highlights
Marie J Welsch is currently employed at Varian Semiconductor Equipment Associates, Inc., where she applies her expertise in ion beam technology. Her innovative contributions have positioned her as a key figure in the semiconductor industry.
Collaborations
Welsch collaborates with talented professionals such as Antonella Cucchetti and Joseph C Olson, enhancing the collective knowledge and innovation within her field.
Conclusion
Marie J Welsch's work in ion beam technology exemplifies the impact of innovation in the semiconductor industry. Her patents not only improve ion implantation processes but also contribute to the overall advancement of technology in this critical field.