The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Nov. 30, 2005
Russell Low, Rowley, MA (US);
Joseph C. Olson, Beverly, MA (US);
Antonella Cucchetti, Beverly, MA (US);
Anthony Renau, W. Newbury, MA (US);
Marie Welsch, Georgetown, MA (US);
Russell Low, Rowley, MA (US);
Joseph C. Olson, Beverly, MA (US);
Antonella Cucchetti, Beverly, MA (US);
Anthony Renau, W. Newbury, MA (US);
Marie Welsch, Georgetown, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.