Plano, TX, United States of America

Joseph B Delaney


Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 41(Granted Patents)


Location History:

  • Dallas, TX (US) (1991 - 1996)
  • Plano, TX (US) (1996 - 2001)

Company Filing History:


Years Active: 1991-2001

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7 patents (USPTO):Explore Patents

Title: Joseph B Delaney: Innovator in Semiconductor Technology

Introduction

Joseph B Delaney is a notable inventor based in Plano, TX (US), recognized for his contributions to semiconductor technology. With a total of 7 patents to his name, Delaney has made significant advancements in the field, particularly in the formation of low-resistance contacts on compound semiconductors.

Latest Patents

Delaney's latest patents include a method for forming a low-resistance contact on a GaAs surface. This method involves depositing a layer of InGaAs over the GaAs surface, followed by a layer of TiW on the InGaAs layer. This innovative approach ensures a reliable and stable electrical contact to the GaAs surface while preventing Ti from reacting with In. His work in this area has been pivotal in enhancing the performance of semiconductor devices.

Career Highlights

Throughout his career, Joseph B Delaney has worked with prominent companies such as Texas Instruments Corporation and Triquint Semiconductors Texas, Inc. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology, contributing to various innovative projects.

Collaborations

Delaney has collaborated with notable professionals in the field, including Clyde R Fuller and Robbie W Skinner. These collaborations have further enriched his work and have led to advancements in semiconductor technologies.

Conclusion

Joseph B Delaney stands out as a significant figure in the realm of semiconductor innovation. His patents and career achievements reflect his dedication to advancing technology in this critical field.

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