The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1997
Filed:
Jul. 12, 1996
Applicant:
Inventors:
Joseph B Delaney, Plano, TX (US);
Kirk E Bracey, Carrollton, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438314 ; 257197 ; 438315 ; 438936 ;
Abstract
A process and structure for an improved collector-up bipolar transistor. The base is formed after the emitter is implanted to eliminate base damage during oxygen implantation typical in prior art collector-up bipolar transistors. In a preferred embodiment, an emitter layer of GaAlAs is implanted with oxygen in the extrinsic emitter region to damage the material and make it insulative. The base is epitaxially grown at low temperature to insure the emitter material remains damaged and insulative.