The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Apr. 23, 1997
Applicant:
Inventors:
Clyde R. Fuller, Plano, TX (US);
Joseph B. Delaney, Plano, TX (US);
Thomas E. Nagle, Dallas, TX (US);
Assignee:
TriQuint Semiconductors Texas, Inc., Hillsboro, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ;
U.S. Cl.
CPC ...
H01L 2/128 ;
Abstract
Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface,comprising the steps of depositing a layer of InGaAs,over the GaAs surface,, and depositing a layer of TiW,on the layer of InGaAs,, whereby a reliable and stable electrical contact is established to the GaAs surface,and whereby Ti does not generally react with the In.