Jong-Min Park

This inventor holds 19 USPTO granted patents, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1997-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-Min Park. Retrieved from https://idiyas.com/inventor/jong-min-park-px7iimu5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 7

Forward Citations = 169(Granted Patents)

Location History:

Suwon, KR (1997 - 2002)
Kyunggi-do, KR (2000 - 2002)

Company Filing History:

19 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 1997-2002

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Areas of Expertise:

Nonvolatile Memory

Redundant Memory Cells

Reference Voltage Generator

Integrated Circuit

Flash Memory

Sector Erase Operations

Input/Output Buffer

Word Line Driving

Level Shifter Circuit

Semiconductor Memory

Sensing Stability

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6483747 - Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices (2002-11-19),

2. 6434052 - Nonvolatile memory devices having alternative programming (2002-08-13),

3. 6407944 - Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices (2002-06-18),

4. 6275100 - Reference voltage generators including first and second transistors of same conductivity type and at least one switch (2001-08-14),

5. 6259628 - Memory devices with verifying input/output buffer circuits and methods of operation thereof (2001-07-10),

6. 6249461 - Flash memory device with a status read operation (2001-06-19),

7. 6222772 - Methods of performing sector erase operations on non-volatile semiconductor memory devices (2001-04-24),

8. 6181606 - Nonvolatile integrated circuit memory devices having improved word line driving capability and methods of operating same (2001-01-30),

9. 6166957 - Nonvolatile semiconductor memory device with a level shifter circuit (2000-12-26),

10. 6166589 - Reference voltage generator circuit for an integrated circuit device (2000-12-26),

11. 6154389 - Semiconductor memory device with a column redundancy occupying a less (2000-11-28),

12. 6151250 - Flash memory device and verify method thereof (2000-11-21),

13. 6122194 - Semiconductor memory device with a column redundancy occupying a less (2000-09-19),

14. 6101126 - Nonvolatile semiconductor memory device with a level shifter circuit (2000-08-08),

15. 6078522 - Non-volatile semiconductor memory device (2000-06-20),

Title: Jong-Min Park: Pioneering Inventor from Kyunggi-do, KR

Introduction: Jong-Min Park is a distinguished inventor hailing from Kyunggi-do, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jong-Min Park holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Jong-Min Park has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the realm of technological advancement.

Collaborations: Throughout his career, Jong-Min Park has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and creativity in all his projects.

Conclusion: Jong-Min Park's relentless pursuit of innovation and his passion for creating technology that improves lives make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]