The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
May. 03, 2002
Applicant:
Inventors:
Ki-Hwan Choi, Seoul, KR;
Jong-Min Park, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Hwasung, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
Abstract
A method is disclosed for preventing over-erasure in a nonvolatile memory device having a plurality of sectors, each sector including a main field and a redundant field. The method includes the steps of programming memory cells included in the main and redundant fields, erasing the memory cells included in the main and redundant fields, and programming over-erased cells of the memory cells included in the main and redundant fields. The main and redundant fields are included in a sector.
Choi, Ki-Hwan. (2002). Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices (U.S. Patent No. 6483747). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6483747
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile