Location History:
- Seoul, KR (2005 - 2010)
- SengNam, KR (2011)
Company Filing History:
9 out of 131,611 
1 out of 164,197 
1 out of 14,724 
Years Active: 2005-2011
Title: Jong-Ho Yang: Innovator in Semiconductor Technology
Introduction
Jong-Ho Yang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His innovative work focuses on improving transistor formation and fabrication techniques.
Latest Patents
One of his latest patents is titled "Transistor formation using capping layer." This method involves depositing a conductive layer over both n-type and p-type field effect transistors, followed by the application of a capping layer. The process includes etching these layers to create a capped gate conductor and ion-implanting the transistors to effectively dope their source and drain regions. Another notable patent is the "Method of fabricating metal silicate layer using atomic layer deposition technique." This method outlines a cycle for forming a metal silicate layer on a semiconductor substrate, utilizing a series of metal oxide and silicon oxide layer formation cycles to achieve the desired thickness.
Career Highlights
Jong-Ho Yang has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and IBM. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Throughout his career, Jong-Ho Yang has collaborated with talented individuals such as Jae-eun Park and Kang-soo Chu. These partnerships have fostered an environment of innovation and creativity, leading to the development of new technologies.
Conclusion
Jong-Ho Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in transistor formation and fabrication techniques.