Samsung Electronics Co., Ltd.

International Business Machines Corporation

Infineon Technologies Ag

Jong-Ho Yang

Kang-soo Chu

Jae-eun Park

Joo-won Lee

Jong-Ho Lee

Ha-Jin Lim

Jae-Eun Park

Hyung-suk Jung

Yun-Seok Kim

Seung-Hwan Lee

Oh-Jung Kwon

O Sung Kwon

Jong-Pyo Kim

Dong Hee Yu

Bong-Seok Seo

J O-won Lee

A method of transistor formation using a capping layer in complimentary metal-oxide semiconductor (CMOS) structures is provided, the method including: depositing a conductive layer over an n-type field effect transistor (nFET) and over a p-type field effect transistor (pFET); depositing a capping layer directly over the conductive layer; etching the capping and conductive layers to form a capped gate conductor to gates of the nFET and pFET, respectively; ion-implanting the nFET transistor with a first dopant; and ion-implanting the pFET transistor with a second dopant, wherein ion-implanting a transistor substantially dopes its source and drain regions, but not its gate region.

Transistor formation using capping layer

There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Method of fabricating metal silicate layer using atomic layer deposition technique

In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.

Electrode line structure having fine line width and method of forming the same

Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

Method of fabricating high-k dielectric layer having reduced impurity

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

Method for forming silicon dioxide film using siloxane

Provided is a method of forming a fine pattern, in which a silicon oxide layer is formed on a photoresist pattern and dry etching is performed on the resultant structure. According to the method, a photoresist pattern is formed on a material layer on which a fine pattern is to be formed, a silicon oxide layer is conformally deposited on the photoresist pattern without damaging the photoresist pattern, and dry etching is performed on a lower layer. During the dry etching, spacers are formed along the sidewalls of the photoresist pattern, and then, a polymer layer is formed on the photoresist pattern. Accordingly, it is possible to prevent the thinning of the photoresist pattern so that a desired pattern can be obtained, and further, to prevent striation or wiggling from occurring on the patterned material layer.

Method of forming fine patterns using silicon oxide layer

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.

Method of forming a thin film with a low hydrogen content on a semiconductor device

Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.

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Seoul, South Korea

Jong-Ho Yang