The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Apr. 15, 2005
Hyung-suk Jung, Suwon-si, KR;
Jong-ho Lee, Suwon-si, KR;
Ha-jin Lim, Goyang-si, KR;
Jae-eun Park, Yonggin-si, KR;
Yun-seok Kim, Seoul, KR;
Jong-ho Yang, Seoul, KR;
Hyung-Suk Jung, Suwon-si, KR;
Jong-Ho Lee, Suwon-si, KR;
Ha-Jin Lim, Goyang-si, KR;
Jae-Eun Park, Yonggin-si, KR;
Yun-Seok Kim, Seoul, KR;
Jong-Ho Yang, Seoul, KR;
Abstract
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.