The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Mar. 31, 2003
Applicants:
Seung-hwan Lee, Seoul, KR;
Jong-ho Yang, Seoul, KR;
Inventors:
Seung-Hwan Lee, Seoul, KR;
Jong-Ho Yang, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/469 ;
U.S. Cl.
CPC ...
Abstract
A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.