Pleasanton, CA, United States of America

Jong Hak Yuh

This inventor holds 14 USPTO granted patents and 1 published patent application, primarily in Non-Volatile Memory. Top assignees: Sandisk Technologies Inc., Silicon Magnetic Systems. Active years: 2004-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Hak Yuh. Retrieved from https://idiyas.com/inventor/jong-hak-yuh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 85.7

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 66(Granted Patents)


Company Filing History:


Years Active: 2004-2020

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Areas of Expertise:
Three-Dimensional Memory
Bit Line Discharge
Sense Amplifier
Multi-Die Environment
Write Performance
Pulsed Control
Word Line
NAND Flash
Memory Device
Programming Techniques
Skew Control
Address Path
14 patents (USPTO):Explore Patents

Title: Jong Hak Yuh - Pioneering Inventor from Pleasanton, CA

Introduction: Jong Hak Yuh is a distinguished inventor based in Pleasanton, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jong Hak Yuh holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Jong Hak Yuh has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Throughout his career, Jong Hak Yuh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Jong Hak Yuh's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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