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Jonathan Huynh

This inventor holds 33 USPTO granted patents and 1 published patent application, primarily in Charge Pump Design. Top assignees: Sandisk Technologies Inc., Sandisk Corporation, Mythic, Inc.. Active years: 2009-2026.

USPTO Granted Patents = 33 (Patent Applications = 1)

% Patents Active = 66.7

Average Co-Inventor Count = 3.2

ph-index = 10

Forward Citations = 316(Granted Patents)

Company Filing History:

29 out of 4,930

Sandisk Technologies Inc.

Years Active: 2009-2026

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Areas of Expertise:

Charge Pump

Memory Programming

Voltage Regulation

Leakage Detection

Current Detection

Clock Oscillator

NAND Memory

High Voltage

Dynamic Regulation

Temperature Coefficient

Ripple Reduction

High Voltage Charge Pumps

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12542185 - Read power savings by temporarily disabling bitline voltage (2026-02-03),

2. 12531129 - Systems and methods for implementing a feedback-informed memory programming of an integrated circuit (2026-01-20),

3. 12488842 - Channel pre-charge process for memory devices using hole pre-charge operation (2025-12-02),

4. 10008276 - High accuracy leakage detection through low voltage biasing (2018-06-26),

5. 9892791 - Fast scan to detect bit line discharge time (2018-02-13),

6. 9698676 - Charge pump based over-sampling with uniform step size for current detection (2017-07-04),

7. 9553506 - Charge pump strength calibration and screening in circuit design (2017-01-24),

8. 9514831 - Multi-clock generation through phase locked loop (PLL) reference (2016-12-06),

9. 9418750 - Single ended word line and bit line time constant measurement (2016-08-16),

10. 9368224 - Self-adjusting regulation current for memory array source line (2016-06-14),

11. 9330776 - High voltage step down regulator with breakdown protection (2016-05-03),

12. 9325276 - Methods and apparatus for clock oscillator temperature coefficient trimming (2016-04-26),

13. 9318209 - Digitally controlled source side select gate offset in 3D NAND memory erase (2016-04-19),

14. 9208895 - Cell current control through power supply (2015-12-08),

15. 9177663 - Dynamic regulation of memory array source line (2015-11-03),

Title: Innovations by Jonathan Huynh: Pioneering Patents in Memory Technology

Introduction

Jonathan Huynh, an esteemed inventor located in San Jose, CA, has made significant contributions to memory technology with a remarkable portfolio of 30 patents. His work is characterized by innovative techniques aimed at enhancing the efficiency and functionality of memory systems.

Latest Patents

Among Jonathan's latest patents is the groundbreaking method for high accuracy leakage detection through low voltage biasing. This technique enables the determination of current leakage from memory arrays by utilizing a low voltage path, allowing for precise leakage measurement as part of testing or during normal memory operations.

Another significant patent focuses on fast scanning to detect bit line discharge time, which introduces systems and methods to minimize sensing time for data states in memory cells. By delaying the ramping of a word line connected to these cells until a threshold current is reached, this invention optimizes performance and reliability.

Career Highlights

Jonathan has been instrumental in advancing memory technology through his tenure at leading companies such as SanDisk Technologies Inc. and SanDisk Corporation, where he contributed to numerous innovations. His extensive experience in the field has made him a respected figure in the industry.

Collaborations

Throughout his career, Jonathan has had the opportunity to collaborate with notable colleagues such as Feng Q Pan and Jongmin Park. These partnerships have further enriched his innovation journey, leading to the development of patented technologies that continue to influence the market.

Conclusion

With his impressive portfolio and dynamic career, Jonathan Huynh stands out as a prominent inventor in the field of memory technology. His latest patents reflect a commitment to innovation and a deep understanding of the complexities involved in memory systems. As technology continues to evolve, Jonathan's contributions will undoubtedly shape the future of memory technology for years to come.

Profile summary based on public USPTO records.

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