San Jose, CA, United States of America

Jon S Owyang


Average Co-Inventor Count = 2.9

ph-index = 7

Forward Citations = 661(Granted Patents)


Company Filing History:


Years Active: 1997-2007

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8 patents (USPTO):Explore Patents

Title: Jon S Owyang: A Luminary in Semiconductor Innovations

Introduction

Jon S Owyang is a distinguished inventor based in San Jose, California, known for his significant contributions to semiconductor technology. With a prolific portfolio comprising eight patents, Owyang has played a pivotal role in advancing the methods and materials used in semiconductor devices. His inventive spirit and research ingenuity are evident in his latest patents that solve complex challenges in the industry.

Latest Patents

Among his impressive body of work, Owyang's latest patents include groundbreaking advancements in atomic layer deposition and gate electrode design. One of his most notable patents focuses on the "Atomic layer deposition of hafnium-based high-k dielectric." This innovative method involves depositing a hafnium-based dielectric film using atomic layer deposition techniques with ozone and hafnium precursors. The resultant semiconductor device is enhanced with a hafnium-based dielectric layer that dramatically improves performance.

Another significant patent by Owyang describes a "Process for forming re-entrant geometry for gate electrode of integrated circuits." This patent outlines the formation of a crystalline semiconductor gate electrode featuring a re-entrant geometry. The process employs a systematically masked polysilicon layer on a substrate, utilizing angled implantations to create tapered implanted regions that culminate in a unique inverted trapezoid cross-section.

Career Highlights

Jon S Owyang has worked with prominent companies, including LSI Logic Corporation and Aviza Technology Limited, where he further honed his skills and innovative capabilities. His tenure at these organizations allowed him to apply his research in practical settings, enriching the semiconductor landscape with his expert methodologies and innovative solutions.

Collaborations

Throughout his career, Owyang has collaborated with notable peers, including Sheldon Aronowitz and Nicholas K Eib. These collaborations have fostered a vibrant exchange of ideas, leading to breakthroughs that push the boundaries of what's possible in semiconductor technology.

Conclusion

Jon S Owyang's contributions to the field of semiconductor innovation are both profound and far-reaching. With a robust portfolio of patents and collaborations with industry leaders, Owyang continues to be a significant figure in advancing semiconductor technologies. His work not only enhances device performance but also paves the way for future innovations that will shape the future of the industry.

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