The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Mar. 25, 1997
Douglas T Grider, Pleasanton, CA (US);
Jon S Owyang, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method, and resulting product, are disclosed for selectively forming polycrystalline silicon over exposed portions of a single crystal silicon substrate. The method includes inhibiting the formation of such polycrystalline silicon over adjacent silicon oxide surfaces; and the resulting product of such a process. The polycrystalline silicon is selectively deposited over the single crystal silicon substrate by first forming a thin layer of a lattice mismatched material over the single crystal silicon surface, and then depositing a layer of polycrystalline silicon over the lattice mismatched material. Preferably, the thin lattice mismatched layer comprises a silicon/germanium (SiGe) alloy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile