The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Sep. 29, 2004
Sang-in Lee, Cupertino, CA (US);
Jon S. Owyang, San Jose, CA (US);
Yoshihide Senzaki, Aptos, CA (US);
Aubrey L. Helms, Jr., Los Gatos, CA (US);
Karem Kapkin, Watsonville, CA (US);
Sang-In Lee, Cupertino, CA (US);
Jon S. Owyang, San Jose, CA (US);
Yoshihide Senzaki, Aptos, CA (US);
Aubrey L. Helms, Jr., Los Gatos, CA (US);
Karem Kapkin, Watsonville, CA (US);
Aviza Technology, Inc., Scotts Valley, CA (US);
Abstract
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.