Los Gatos, CA, United States of America

Aubrey L Helms, Jr

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 542(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: **Aubrey L. Helms, Jr.: Pioneer in Atomic Layer Deposition Technology**

Introduction

Aubrey L. Helms, Jr. is an innovative inventor based in Los Gatos, California, known for her significant contributions to the field of semiconductor technology. With a strong focus on atomic layer deposition processes, she has developed methods that enhance the performance and efficiency of electronic devices. Her expertise is reflected in her patented technology related to hafnium-based high-k dielectrics.

Latest Patents

Helms holds a patent for her invention titled "Atomic layer deposition of hafnium-based high-k dielectric." This groundbreaking method involves atomic layer deposition using ozone and a hafnium precursor to create a hafnium-based dielectric film. The invention also describes a semiconductor device that features a substrate equipped with a hafnium-based dielectric layer, as well as an interfacial layer composed of silicon dioxide with a crystalline structure. This advancement serves to improve the performance characteristics of semiconductor devices.

Career Highlights

Aubrey Helms has established herself at Aviza Technology Limited, a firm recognized for its advancements in the field of semiconductor manufacturing equipment and materials. Her role at the company showcases her commitment to pioneering new technologies that address industry needs and facilitate the development of cutting-edge electronic components.

Collaborations

Throughout her career, Helms has collaborated with notable coworkers, including Sang-In Lee and Jon S. Owyang. These partnerships have fostered an environment of creativity and innovation, resulting in significant advancements in their shared field of work.

Conclusion

Aubrey L. Helms, Jr. continues to make impactful contributions to semiconductor technology through her inventions and collaborations. Her patented method of atomic layer deposition has set a new standard for the industry, demonstrating her dedication to innovation and excellence in her field. As she advances her career and explores new horizons, Helms remains a pivotal figure in the realm of semiconductor development.

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