Jon Lescrenier

Title: Jon Lescrenier: Innovator in Memory Circuit Technology

Introduction

Jon Lescrenier is a notable inventor based in Dallas, TX (US), recognized for his contributions to integrated circuit technology. He holds 2 patents that focus on enhancing memory performance and reliability. His work is instrumental in advancing the field of static random access memory (SRAM) devices.

Latest Patents

Lescrenier's latest patents include innovative solutions for memory leakage detection and bit failure classification. One of his patents addresses bitline leakage detection in memories, which involves an integrated circuit that contains a memory and a sense amplifier. This circuit features an extended delay circuit that prolongs the time between when a precharged bitline is floated and when a wordline is enabled. Another significant patent outlines a method for determining and classifying SRAM bit fail modes suitable for production test implementation and real-time feedback. This method includes a comprehensive testing sequence to identify hard and soft bit failures in memory cells, ensuring optimal performance and reliability.

Career Highlights

Jon Lescrenier is currently employed at Texas Instruments Corporation, a leading company in semiconductor technology. His work at Texas Instruments has allowed him to contribute significantly to the development of advanced memory solutions.

Collaborations

Throughout his career, Lescrenier has collaborated with talented professionals, including Wah Kit Loh and Md Abul Bashar Khan. These collaborations have fostered innovation and enhanced the quality of his work in the field of memory technology.

Conclusion

Jon Lescrenier's contributions to integrated circuit technology and memory performance are noteworthy. His patents reflect a commitment to innovation and excellence in the field. His work continues to influence the development of reliable memory solutions in the industry.