The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2008

Filed:

Apr. 06, 2005
Applicants:

Wah Kit Loh, Richardson, TX (US);

MD Abul Bashar Khan, Dallas, TX (US);

Kemal Tamer San, Plano, TX (US);

Jon Charles Lescrenier, Dallas, TX (US);

Inventors:

Wah Kit Loh, Richardson, TX (US);

Md Abul Bashar Khan, Dallas, TX (US);

Kemal Tamer San, Plano, TX (US);

Jon Charles Lescrenier, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method () for determining various bit failure modes in a static random access memory device. A hard/soft bit failure test sequence is performed on each cell of the memory device to determine whether the cell exhibits a hard bit failure or a soft bit failure, then a data retention test is performed on the cell having soft bit failure to determine whether the cell exhibits a data retention failure. A write or disturb test sequence is then performed on the cell not having data retention failure, and a read or disturb test sequence is performed on the cell having write or disturb failure. Finally, a disturb test sequence is performed on the cell having read or disturb failure, and then an analysis is performed on the data from the tests to determine whether the cell exhibits one of a write, read, or disturb failure.


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