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Jon-Hsu Ho

This inventor holds 36 USPTO granted patents and 9 published patent applications, primarily in Multi-Gate Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 36 (Patent Applications = 9)

% Patents Active = 94.4

Average Co-Inventor Count = 6.8

ph-index = 4

Forward Citations = 211(Granted Patents)

Location History:

New Taipei, TW (2014 - 2024)
Hsinchu, TW (2022 - 2024)

Company Filing History:

34 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

2 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

Multi-Gate Devices

FinFET Design

Integrated Circuit Layout

Channel Configurations

Threshold Voltage Adjustment

Silicide Technology

Air Gap Structures

Nanosheet Transistor

Transistor Structure

Fabrication Methods

Semiconductor Devices

Etch Rate Modulation

36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12701769 - Semiconductor structure and method for manufacturing the same (2026-08-04),

2. 12701747 - Semiconductor device with backside interconnection and method for forming the same (2026-08-04),

3. 12568640 - Multi-gate devices with multi-layer inner spacers and fabrication methods thereof (2026-03-03),

4. 12396240 - Source/drain silicide for multigate device performance and method of fabricating thereof (2025-08-19),

5. 12361199 - Integrated circuit layout generation method (2025-07-15),

6. 12317526 - Multi-gate devices and fabricating the same with etch rate modulation (2025-05-27),

7. 12300754 - Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof (2025-05-13),

8. 12218214 - Source/drain silicide for multigate device performance and method of fabricating thereof (2025-02-04),

9. 12125848 - Semiconductor device structure incorporating air gap (2024-10-22),

10. 12040381 - Method of manufacturing semiconductor devices and semiconductor devices (2024-07-16),

11. 11949001 - Multi-gate devices and fabricating the same with etch rate modulation (2024-04-02),

12. 11908919 - Multi-gate devices with multi-layer inner spacers and fabrication methods thereof (2024-02-20),

13. 11907636 - Integrated circuit layout generation method (2024-02-20),

14. 11626400 - Semiconductor device structure incorporating air gap (2023-04-11),

15. 11621343 - Method of manufacturing semiconductor devices and semiconductor devices (2023-04-04),

Title: The Innovative Journey of Jon-Hsu Ho

Introduction: Jon-Hsu Ho, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Jon-Hsu Ho holds several patents in the field of electronics and semiconductor technology, with his most recent patent focusing on advanced nanotechnology applications in microchips.

Career Highlights: With a career spanning over two decades, Jon-Hsu Ho has worked for leading tech companies in Taiwan, where he played a key role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Jon-Hsu Ho has collaborated with top researchers and engineers from renowned universities and research institutions worldwide, fostering a culture of innovation and excellence in his projects.

Conclusion: Jon-Hsu Ho's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech community.

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