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Essex, VT, United States of America

John R Abernathey

This inventor holds 8 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1985-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John R Abernathey. Retrieved from https://idiyas.com/inventor/john-r-abernathey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 470(Granted Patents)

Location History:

Jericho, VT (US) (1985 - 1987)
Essex, VT (US) (1988 - 1993)
Underhill, VT (US) (1995 - 1997)

Company Filing History:

8 out of 166,425

International Business Machines Corporation

Years Active: 1985-1997

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5672901 - Structure for interconnecting different polysilicon zones on (1997-09-30),

2. 5453400 - Method and structure for interconnecting different polysilicon zones on (1995-09-26),

3. 5219788 - Bilayer metallization cap for photolithography (1993-06-15),

4. 4755478 - Method of forming metal-strapped polysilicon gate electrode for FET (1988-07-05),

5. 4725560 - Silicon oxynitride storage node dielectric (1988-02-16),

6. 4649627 - Method of fabricating silicon-on-insulator transistors with a shared (1987-03-17),

7. 4601779 - Method of producing a thin silicon-on-insulator layer (1986-07-22),

8. 4556585 - Vertically isolated complementary transistors (1985-12-03),

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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