The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Feb. 25, 1991
John R Abernathey, Essex, VT (US);
Timothy H Daubenspeck, Colchester, VT (US);
Stephen E Luce, Cambridge, VT (US);
Denis J Poley, Richmond, VT (US);
Rosemary A Previti-Kelly, Richmond, VT (US);
Gary P Viens, Colchester, VT (US);
Jung H Yoon, Pleasant Valley, NY (US);
IBM Corporation, Armonk, NY (US);
Abstract
A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO.sub.2. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.