Norristown, PA, United States of America

John Manning Savidge Neilson

This inventor holds 21 USPTO granted patents and 1 published patent application, primarily in MOSFET Technology. Top assignee: Texas Instruments Corporation. Active years: 2012-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Manning Savidge Neilson. Retrieved from https://idiyas.com/inventor/john-manning-savidge-neilson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 68(Granted Patents)


Company Filing History:


Years Active: 2012-2022

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Areas of Expertise:
Integrated Channel Diode
Medium Voltage MOSFET
High Voltage MOS Transistor
Fast Switching IGBT
Dual-Gate Cells
Trench Field Plate
Polysilicon Trench Filling
Super Junction MOSFET
Power Integrated Circuit
Vertical MOSFET
EMBEDDED Emitter Shorting Contacts
Curved Trench Feature
21 patents (USPTO):Explore Patents

Title: The Innovative Contributions of John Manning Savidge Neilson

Introduction: John Manning Savidge Neilson is an accomplished inventor based in Norristown, PA, with a remarkable portfolio of 21 patents focusing on advancements in semiconductor technology. His ingenuity has significantly impacted the field, culminating in several groundbreaking inventions that enhance the performance and efficiency of semiconductor devices.

Latest Patents: Among his latest innovations are two notable patents:

1. **Integrated Channel Diode** - This semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region, with one portion serving as a gate for an MOS transistor, while the other functions as a gate for a channel diode.

2. **Medium High Voltage MOSFET Device** - This invention features a medium voltage MOSFET with a vertical drain drift region situated between RESURF trenches that incorporate field plates electrically coupled to the MOSFET's source electrode. The design includes a split gate with a central opening above the drain drift region, significantly improving its functionality.

Career Highlights: John is currently associated with Texas Instruments Corporation, a leading company renowned for its innovations in semiconductor technology. His role within the company allows him to collaborate on cutting-edge projects, furthering his expertise and contributions to the industry.

Collaborations: Throughout his career, John has had the opportunity to work alongside talented individuals such as Christopher Boguslaw Kocon and Simon John Molloy. Their collective efforts have fostered an environment of creativity and innovation, leading to significant advancements in their respective fields.

Conclusion: John Manning Savidge Neilson stands out as a prominent figure in semiconductor innovation. With a solid patent portfolio and ongoing projects at Texas Instruments Corporation, he continues to push the boundaries of technology, shaping the future of semiconductor devices and their applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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