The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 30, 2014
Texas Instruments Incorporated, Dallas, TX (US);
Christopher Boguslaw Kocon, Mountain Top, PA (US);
John Manning Savidge Neilson, Norristown, PA (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.